Titanium nitride metal interconnection system and method of forming the same
US6528835B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 22, 2000 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Sep 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a DRAM integrated circuit structure (30) and the structure so formed, in which a common interconnect material (42, 48) is used as a first level interconnection layer in both an array portion (30a) and periphery portion (30p) is disclosed. The interconnect material (42, 48) consists essentially of titanium nitride, and is formed by direct reaction of titanium metal (40) in a nitrogen ambient. Titanium silicide (44) is formed at each contact location (CT, BLC) as a result of the direct react process. Storage capacitor plates (16, 18) and the capacitor dielectric (17) are formed over the interconnect material (42, 48), due to the thermal stability of the material. Alternative processes of forming the interconnect material (42, 48) are disclosed, to improve step coverage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.