NAND type flash memory device having dummy region
US6528841B2 · kind B2 · utility
13Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2001 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Nov 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A NAND type flash memory device has a dummy region forming a dummy pattern. In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.