Inventor · Seongnam-si, KR

Jae-Duk Lee

58Patents
11h-index
70Co-inventors
81Inventor score

Filing activity: Jun 7, 1995 → Dec 19, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10381370B2 Semiconductor device Electricity 39 Active
US9716104B2 Vertical memory devices having dummy channel regions Electricity 31 Active
US5877791A Heat generating type ink-jet print head Performing Operations; Transporting 28 Expired
US9431415B2 Semiconductor device with vertical memory Electricity 19 Active
US6423241B1 Ink jet print head and a method of producing the same Performing Operations; Transporting 19 Expired
US9634024B2 Semiconductor device having vertical channel and air gap, and method of manufacturing thereof Electricity 17 Active
US5733433A Heat generating type ink-jet print head Performing Operations; Transporting 17 Expired
US8248853B2 Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word line Physics 16 Active
US10367003B2 Vertical non-volatile memory device and method for fabricating the same Electricity 13 Active
US6528841B2 NAND type flash memory device having dummy region Electricity 13 Expired
US6070289A Low noise vacuum cleaner Human Necessities 13 Expired
US10153292B2 Vertical memory devices having dummy channel regions Electricity 11 Active
US6660587B2 Method for forming a gate electrode in a semiconductor device Electricity 10 Expired
US9659959B2 Semiconductor devices Electricity 10 Active
US9905568B2 Nonvolatile memory device and a method for fabricating the same Electricity 7 Active
US10903234B2 Three-dimensional semiconductor device Electricity 6 Active
US9887208B2 Vertical memory device Electricity 6 Active
US10468433B2 Three-dimensional semiconductor devices including gate electrodes Electricity 5 Active
US8540454B2 Manhole cover Fixed Constructions 5 Active
US9508738B2 Semiconductor devices Electricity 5 Active
US10115799B2 Non-volatile memory devices and manufacturing methods thereof Electricity 4 Active
US6905927B2 Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxide Electricity 4 Expired
US9318329B2 Methods of forming vertical cell semiconductor devices with single-crystalline channel structures Electricity 4 Active
US9646984B2 Non-volatile memory device Electricity 4 Active
US9972636B2 Vertical memory devices having dummy channel regions Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.