Method and composition for polishing by CMP
US6530824B2 · kind B2 · utility
6Cited by
20References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Jun 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the chloride ions migrate to electric fields concentrated at the high points. The chloride ions at the high points deter replating of copper ions from solution onto the high points. Instead the copper ions replate elsewhere on the interconnects, which reduces the surface roughness of the interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.