Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements
US6531373B2 · kind B2 · utility
193Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2000 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Dec 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a phase-change memory device that uses SOI in a chalcogenide volume of memory material. Parasitic capacitance, both vertical and lateral, are reduced or eliminated in the inventive structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.