Magnetoresistance random access memory for improved scalability
US6531723B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Oct 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A scalable magnetoresistive tunneling junction memory cell comprising a fixed ferromagnetic region having a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, an electrically insulating material positioned on the fixed ferromagnetic region to form a magnetoresistive tunneling junction, and a free ferromagnetic region having a magnetic moment vector oriented in a position parallel or anti-parallel to that of the fixed ferromagnetic region. The free ferromagnetic region includes N ferromagnetic layers that are anti-ferromagnetically coupled, where N is an integer greater than or equal to two. The number N of ferromagnetic layers can be adjusted to increase the effective magnetic switching volume of the MRAM device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.