Leonid Savtchenko
5Patents
5h-index
6Co-inventors
45Inventor score
Filing activity: Oct 16, 2001 → Aug 25, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6545906B1 | Method of writing to scalable magnetoresistance random access memory element | Physics | 303 | Expired |
| US7095646B2 | Multi-state magnetoresistance random access cell with improved memory storage density | Physics | 48 | Expired |
| US6531723B1 | Magnetoresistance random access memory for improved scalability | Electricity | 31 | Expired |
| US7465589B2 | Multi-state magnetoresistance random access cell with improved memory storage density | Physics | 5 | Expired |
| US7184300B2 | Magneto resistance random access memory element | Physics | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.