Semiconductor device
US6531747B1 · kind B1 · utility
3Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2000 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Apr 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/12
Abstract
A driver transistor including a gate electrode is formed on the surface of a p well of a silicon substrate. A silicon oxide film and a silicon nitride film are formed to cover the driver transistor. An interlayer insulator film is formed on the silicon nitride film. A contact hole is arranged to planarly overlap with at least the gate electrode. Thus, a semiconductor device capable of performing desired operations and reducing a memory cell area is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.