Method of substrate temperature control and method of assessing substrate temperature controllability
US6532796B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 1999 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Oct 27, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of substrate temperature control for plasma processing apparatus in which a substrate which is being held on a substrate holder in a process chamber is being processed, and He gas is passed through the gap between the substrate and the substrate mounting surface during the processing of the substrate, the substrate temperature is controlled by the thermal transfer characteristics of the gas and the substrate is cooled to the prescribed temperature, and the pressure of the He gas is preset by a pressure setting part 50a, the actual pressure is measured with a pressure gauge 49, and the gas flow rate is controlled in such a way that the measured pressure becomes equal to the set pressure by a pressure control valve 46. Furthermore, the substrate temperature controllability is assessed by monitoring the gas flow rate with a substrate temperature controllability assessment part 50b.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.