Methodology for in-situ doping of aluminum coatings
US6534133B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition process for the in-situ preparation of conformal copper-doped aluminum coatings on a substrate comprises the steps of generating a first flow of a first reactant vapor directed to the substrate in the reactor, the first reactant vapor including a copper source precursor; heating the substrate to a temperature sufficient to decompose the first reactant vapor and form an ultrathin copper seed layer; generating a second flow of a second reactant vapor directed to the substrate in the reactor, the second reactant vapor including an aluminum source precursor; and heating the substrate to a temperature higher than 185° C. to decompose the second reactant vapor and form a copper-doped aluminum film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.