Jonathan E. Faltermeier
5Patents
3h-index
12Co-inventors
50Inventor score
Filing activity: Dec 19, 1995 → Aug 1, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6534133B1 | Methodology for in-situ doping of aluminum coatings | Electricity | 494 | Expired |
| US6077571A | Conformal pure and doped aluminum coatings and a methodology and apparatus for their preparation | Electricity | 42 | Expired |
| US9401303B2 | Handler wafer removal by use of sacrificial inert layer | Electricity | 4 | Active |
| US8835250B2 | FinFET trench circuit | Electricity | 1 | Active |
| US6767781B2 | Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.