Method of fabricating a thin-film transistor
US6534353B1 · kind B1 · utility
14Cited by
0References
6Claims
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Assignee
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Key dates
| Filing date | Oct 9, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Oct 9, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a thin-film transistor including forming a polycrystalline semiconductor thin film on a substrate by irradiating with a laser beam an amorphous semiconductor thin film formed on the substrate. Heat treating the polycrystalline semiconductor thin film while the substrate is held by a substrate holder provided in a container containing hydrogen, and processing, prior to or after the heat treating, the polycrystalline semiconductor thin film into a specified configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.