Method for fabricating multi-layered substrates
US6534381B2 · kind B2 · utility
74Cited by
20References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2000 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Jan 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a multi-layered substrate. The method includes forming a compliant layer on a face of a first substrate (10). Joining the compliant layer against a face of a second substrate (20), where the compliant layer forms around a surface non-uniformity on the second substrate face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.