Mikhail Korolik
67Patents
16h-index
68Co-inventors
87Inventor score
Filing activity: Jan 4, 2000 → Oct 11, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9275834B1 | Selective titanium nitride etch | Electricity | 519 | Active |
| US9449843B1 | Selectively etching metals and metal nitrides conformally | Chemistry; Metallurgy | 349 | Active |
| US8951429B1 | Tungsten oxide processing | Electricity | 210 | Active |
| US9111877B2 | Non-local plasma oxide etch | Electricity | 179 | Active |
| US9236265B2 | Silicon germanium processing | Electricity | 164 | Active |
| US9355862B2 | Fluorine-based hardmask removal | Electricity | 147 | Active |
| US9478434B2 | Chlorine-based hardmask removal | Electricity | 133 | Active |
| US9355863B2 | Non-local plasma oxide etch | Electricity | 130 | Active |
| US9576809B2 | Etch suppression with germanium | Electricity | 129 | Active |
| US9831097B2 | Methods for selective etching of a silicon material using HF gas without nitrogen etchants | Electricity | 99 | Active |
| US10043674B1 | Germanium etching systems and methods | Electricity | 97 | Active |
| US10043684B1 | Self-limiting atomic thermal etching systems and methods | Electricity | 93 | Active |
| US6534381B2 | Method for fabricating multi-layered substrates | Electricity | 74 | Expired |
| US7367345B1 | Apparatus and method for providing a confined liquid for immersion lithography | Emerging Cross-Sectional Technologies | 40 | Expired |
| US10177227B1 | Method for fabricating junctions and spacers for horizontal gate all around devices | Electricity | 25 | Active |
| US7383843B2 | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7749689B2 | Methods for providing a confined liquid for immersion lithography | Emerging Cross-Sectional Technologies | 9 | Active |
| US8287647B2 | Apparatus and method for atomic layer deposition | Electricity | 9 | Active |
| US7737097B2 | Method for removing contamination from a substrate and for making a cleaning solution | Physics | 8 | Active |
| US7204639B1 | Method and apparatus for thin metal film thickness measurement | Physics | 7 | Expired |
| US7799141B2 | Method and system for using a two-phases substrate cleaning compound | Electricity | 7 | Active |
| US7862662B2 | Method and material for cleaning a substrate | Physics | 7 | Active |
| US7696141B2 | Cleaning compound and method and system for using the cleaning compound | Electricity | 7 | Active |
| US7632376B1 | Method and apparatus for atomic layer deposition (ALD) in a proximity system | Electricity | 7 | Active |
| US8475599B2 | Substrate preparation using stabilized fluid solutions and methods for making stable fluid solutions | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.