Process to create robust contacts and interconnects
US6534394B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2000 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Dec 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76865
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided to preferably create robust contacts and interconnects by depositing a thin layer of a first conductive material on a wafer through a non-ionized deposition process. The thin layer overlays the wafer and lines any apertures in the wafer. Deposition of a first conductive material is followed by depositing another thin layer of a second conductive material by an ionized deposition process. In this manner, the second conductive material overlays the first conductive material and additionally lines the wafer and any apertures in the wafer. Furthermore, if the apertures open to underlying areas, the conductive materials that line the apertures preferably create a conductive film that can form a plurality of contacts between the conductive film and the underlying areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.