Precursors for making low dielectric constant materials with improved thermal stability
US6534616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Apr 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp2C—F and some hyperconjugated sp3C—F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HDPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.