Epitaxial aluminium-gallium nitride semiconductor substrate
US6534791B1 · kind B1 · utility
23Cited by
3References
7Claims
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Key dates
| Filing date | Sep 6, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor epitaxial substrate includes a low-temperature-deposited buffer layer, the composition of which is AlxGa1−xN, where 0≦x≦1, and a single crystalline layer, the composition of which is AlyGa1−yN, where 0>y≦1. The single crystalline layer is deposited directly over the low-temperature-deposited buffer layer, wherein the buffer layer has a mole fraction x satisfying (y−0.3)≦x>y.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.