Semiconductor light-emitting element
US6534795B2 · kind B2 · utility
17Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Nov 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
Abstract
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.