Semiconductor device

US6534823B2 · kind B2 · utility

Assignee

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

• Raymond J. E. Hueting · Helmond, NL
• Erwin Hijzen · Eindhoven, NL

Key dates

• Filing date: May 18, 2001
• Grant date: Mar 18, 2003
• Expiry date: May 18, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor body has source and drain regions (4 and 5; 4′ and 5′) spaced apart by a body region (6; 6′) and a drain drift region (50; 50′) and both meeting the same surface (3a) of the semiconductor body. An insulated gate structure (7; 70′; 700) is provided within a trench (80; 80′; 80″) extending in the semiconductor body. The gate structure has a gate conductive region (70b; 70′b; 70″b) separated from the trench by a dielectric layer (70a; 70′a) such that a conduction channel accommodation portion (60; 60′) of the body region extends along at least side walls (80a; 80′a; 80″a) of the trench and between the source (4; 4′) and drain drift (50; 50′) regions. The trench extends from the body region into the drain drift region (50; 50′) and the dielectric layer has, at least on side walls (80a; 80′a; 80″a) of the trench, a greater thickness in the portion of the trench extending into the drain drift region (50; 50′) than in the remaining portion of the trench so that an extension (71; 71′; 71″; 710) of the gate conductive region extending within the trenc…