Raymond J. E. Hueting
28Patents
11h-index
22Co-inventors
67Inventor score
Filing activity: Nov 29, 1999 → Sep 2, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6441454B2 | Trenched Schottky rectifiers | Electricity | 92 | Expired |
| US6541817B1 | Trench-gate semiconductor devices and their manufacture | Electricity | 38 | Expired |
| US6600194B2 | Field-effect semiconductor devices | Electricity | 30 | Expired |
| US6319777A | Trench semiconductor device manufacture with a thicker upper insulating layer | Electricity | 26 | Expired |
| US6936890B2 | Edge termination in MOS transistors | Electricity | 24 | Expired |
| US6774434B2 | Field effect device having a drift region and field shaping region used as capacitor dielectric | Electricity | 14 | Expired |
| US6509608B1 | Trench-gate field-effect transistors and their manufacture | Electricity | 13 | Expired |
| US6515348B2 | Semiconductor device with FET MESA structure and vertical contact electrodes | Electricity | 13 | Expired |
| US7538337B2 | Nanowire semiconductor device | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7408223B2 | Trench insulated gate field effect transistor | Electricity | 11 | Expired |
| US6833583B2 | Edge termination in a trench-gate MOSFET | Electricity | 11 | Expired |
| US6518129B2 | Manufacture of trench-gate semiconductor devices | Electricity | 10 | Expired |
| US6534823B2 | Semiconductor device | Electricity | 10 | Expired |
| US6784488B2 | Trench-gate semiconductor devices and the manufacture thereof | Electricity | 6 | Expired |
| US7033889B2 | Trenched semiconductor devices and their manufacture | Electricity | 5 | Expired |
| US7235842B2 | Insulated gate power semiconductor devices | Electricity | 3 | Expired |
| US6956264B2 | Trenched semiconductor devices and their manufacture | Electricity | 3 | Expired |
| US6777780B2 | Trench bipolar transistor | Electricity | 3 | Expired |
| US6559502B2 | Semiconductor device | Electricity | 3 | Expired |
| US7262460B2 | Vertical insulated gate transistor and manufacturing method | Electricity | 2 | Expired |
| US7199010B2 | Method of maufacturing a trench-gate semiconductor device | Electricity | 2 | Expired |
| US7696599B2 | Trench MOSFET | Electricity | 2 | Expired |
| US7629647B2 | Trench MOS structure | Electricity | 1 | Expired |
| US7671440B2 | Lateral field-effect transistor having an insulated trench gate electrode | Electricity | 1 | Expired |
| US7109567B2 | Semiconductor device and method of manufacturing such device | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.