Piezoresonator
US6534900B2 · kind B2 · utility
80Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Feb 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/02204
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film piezoresonator, which can be tuned over a wide range of RF frequencies, includes a piezo layer between a first electrode layer and a second electrode layer. An electroactive layer of an electrostrictive material, which experiences a mechanical deformation when an electrical voltage is applied, is disposed between a third electrode layer and the second electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.