Plasma processing apparatus
US6534922B2 · kind B2 · utility
12Cited by
16References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Jun 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a processing chamber having a working volume. A single Radio-Frequency (RF) plasma generating antenna is positioned outside the working volume for inducing an electric field in the working volume. A dielectric trough extends into a wall of the chamber. The antenna is non-planar and transfers power through at least one wall and the base of the trough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.