Downstream surface cleaning process
US6536449B1 · kind B1 · utility
21Cited by
85References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1998 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Nov 16, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods are provided for selectively removing unwanted material from a surface of a semiconductor wafer without causing damage to or etching of underlying portions of the semiconductor. One embodiment of the invention includes the use of reactive species from a plasma source to facilitate the removal of residues remaining after metal etching on a silicon wafer, where the gases employed in creating the plasma include hydrogen, halogens such as fluorine, and little or no oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.