SiGeC semiconductor crystal and production method thereof
US6537369B1 · kind B1 · utility
11Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Nov 27, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A B-doped Si1−x−yGexCy layer 102 (where 0<x<1, 0.01≦y<1) is epitaxially grown on a Si substrate 101 using a UHV-CVD process. In the meantime, in-situ doping is performed using B2H6 as a source gas of boron (B) which is an impurity (dopant). Next, the Si1−x−yGexCy layer 102 is annealed to form a B-doped Si1−x−yGexCy crystalline layer 103. In this case, the annealing temperature is set preferably at between 700° C. and 1200° C., both inclusive, and more preferably at between 900° C. and 1000° C., both inclusive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.