Single-substrate-heat-processing apparatus for semiconductor process
US6537422B2 · kind B2 · utility
24Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Jul 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A higher-temperature heating zone and lower-temperature heating zone are set in a process chamber for a single-substrate-heat-processing apparatus in order to subject a wafer to two processes with different process temperatures. In the higher-temperature heating zone, the wafer is heated as it is placed on a worktable. In the lower-temperature heating zone, the wafer is heated with a smaller heat quantity as it floats above the worktable. In the lower-temperature heating zone, a heat ray reflector for compensating for heat dissipated from the peripheral portion of the wafer is disposed to surround the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.