Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
US6537655B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | May 16, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249978
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention is directed to a novel a single crystal silicon wafer. In one embodiment, this wafer comprises: (a) two major generally parallel surfaces (i.e., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front surface layer which comprises the region of the wafer extending a distance of at least about 10 &mgr;m from the front surface toward the central plane; and (d) a bulk layer which comprises the region of the wafer extending from the central plane to the front surface layer. This wafer is characterized in that the wafer has a non-uniform distribution of crystal lattice vacancies, wherein (a) the concentration of crystal lattice vacancies in the bulk layer are greater than the concentration of crystal lattice vacancies in the front surface layer, (b) the crystal lattice vacancies have a concentration profile in which the peak density of the crystal lattice vacancies is at or near the central plane, and (c) the concentration of crystal lattice vacancies generally decreases from the position of peak density toward the front surface of the wafer. In addition, the front surface of the wafer has an epitaxial layer depos…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.