Method for forming Ta2O5 dielectric layer using plasma enhanced atomic layer deposition
US6537925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Dec 4, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a Ta2O5 dielectric layer using plasma enhanced atomic layer deposition, which can improve the quality of a layer and its electric property by forming a Ta2O5 dielectric layer using a plasma enhanced atomic layer deposition. The method for forming a Ta2O5 dielectric layer using plasma enhanced atomic layer deposition, comprising the steps of: a) flowing Ta(OC2H5)5 source gas in a chamber and generating plasma; b) depositing a Ta2O5 layer by using the plasma; c) purging the chamber; d) repeatedly performing the steps a) to c) in order to form a Ta2O5 dielectric layer; e) thermally treating the surface of the Ta2O5 dielectric layer in an oxygen atmosphere; and f) crystallizing the Ta2O5 dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.