Silicon-on-insulator (SOI) trench photodiode

US6538299B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Young Hoon Kwark · Chappaqua, US
• Dan Moy · Bethel, US
• Mark B. Ritter · Sherman, US
• Dennis L. Rogers · Croton-on-Hudson, US
• Jeffrey J. Welser · Stamford, US

Key dates

• Filing date: Oct 3, 2000
• Grant date: Mar 25, 2003
• Expiry date: Oct 3, 2020

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.