Jeffrey J. Welser
20Patents
16h-index
29Co-inventors
73Inventor score
Filing activity: Sep 15, 1995 → Oct 31, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5998292A | Method for making three dimensional circuit integration | Electricity | 480 | Expired |
| US6077745A | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array | Electricity | 163 | Expired |
| US5874760A | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation | Electricity | 137 | Expired |
| US6440801B1 | Structure for folded architecture pillar memory cell | Electricity | 118 | Expired |
| US5929477A | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array | Electricity | 106 | Expired |
| US5990509A | 2F-square memory cell for gigabit memory applications | Electricity | 100 | Expired |
| US6034389A | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array | Emerging Cross-Sectional Technologies | 92 | Expired |
| US6114725A | Structure for folded architecture pillar memory cell | Electricity | 86 | Expired |
| US6316309A | Method of forming self-isolated and self-aligned 4F-square vertical FET-trench DRAM cells | Electricity | 86 | Expired |
| US6033957A | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation | Electricity | 61 | Expired |
| US6013548A | Self-aligned diffused source vertical transistors with deep trench capacitors in a 4F-square memory cell array | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5559912A | Wavelength-selective devices using silicon-on-insulator | Physics | 52 | Expired |
| US6137128A | Self-isolated and self-aligned 4F-square vertical fet-trench dram cells | Electricity | 44 | Expired |
| US5895273A | Silicon sidewall etching | Electricity | 37 | Expired |
| US6538299B1 | Silicon-on-insulator (SOI) trench photodiode | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6069381A | Ferroelectric memory transistor with resistively coupled floating gate | Physics | 25 | Expired |
| US6204140A | Dynamic random access memory | Electricity | 16 | Expired |
| US6583462B1 | Vertical DRAM having metallic node conductor | Electricity | 7 | Expired |
| US6700145B1 | Capacitor with high charge storage capacity | Electricity | 7 | Expired |
| US6376873B1 | Vertical DRAM cell with robust gate-to-storage node isolation | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.