Semiconductor device and method of production of same
US6538332B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Oct 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device thinner than the past and improved in reliability of electrical connection between semiconductor chips and an interconnection substrate including a polyimide film (insulating plastic film) formed with stud bump through holes, an interconnection pattern formed on one surface of the polyimide film and covering openings of the stud bump through holes at least at that one surface, a first semiconductor chip flip-chip bonded to the interconnection pattern, a second semiconductor chip flip-chip bonded to the other surface of the polyimide film so as to be electrically connected with the interconnection pattern through the stud bump through holes, and solder bumps (external connection terminals) and a method for production of the same by fewer steps than in the past.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.