Pump circuits using flyback effect from integrated inductance
US6538494B2 · kind B2 · utility
6Cited by
9References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 14, 2001 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/1584
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high speed semiconductor device, such as a high speed dynamic random access memory (DRAM) includes an on-chip charge pump. The charge pump is based upon the flyback effect of an inductor, thereby permitting the charge pump to be switched at a frequency compatible with high performance semiconductor devices. The inductor of the charge pump comprises a plurality of serially connected metal spirals and is integrated into the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.