Chemical deposition reactor and method of forming a thin film using the same
US6539891B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | May 19, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/509
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical deposition reactor capable of switching rapidly from one process gas to another and method of forming a thin film using the same. The reactor of the present invention comprises: a reactor cover, having an inlet and an outlet, for keeping reactant gases from other part of the reactor where the pressure is lower than inside of the reactor; a gas flow control plate, fixed onto the reactor cover, for controlling the gas flow through inlet and outlet by the spacing between itself and the reactor cover; and a substrate supporting plate for confining a reaction cell with the reactor cover. The method of the present invention can be accomplished using the above reactor. In the method, process gases including a deposition gas, a reactant gas and a purge gas are sequentially and repeatedly supplied in the reactor to form a thin film on a substrate. A RF (Radio Frequency) plasma power is applied to a plasma electrode of the reactor synchronised with the supply of at least one among the process gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.