Method and apparatus for post-polish thickness and uniformity control
US6540591B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Apr 18, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Apr 18, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/04
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for polishing wafers includes providing a wafer having a process layer formed thereon; providing a polishing tool having a plurality of control zones and being adapted to polish the process layer based on an operating recipe, the operating recipe having a control variable corresponding to each of the control zones; measuring a pre-polish thickness profile of the process layer; comparing the pre-polish thickness profile to a target thickness profile to determine a desired removal profile; determining values for the control variables associated with the control zones based on the desired removal profile; and modifying the operating recipe of the polishing tool based on the values determined for the control variables. A processing line includes a polishing tool, a metrology tool, and a process controller. The polishing tool is adapted to polish a wafer having a process layer formed thereon based on an operating recipe. The polishing tool includes a plurality of control zones and the operating recipe includes a control variable corresponding to each of the control zones. The metrology tool is adapted to measure a pre-polish thickness profile of the process layer. The process c…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.