High K dielectric film
US6541280B2 · kind B2 · utility
124Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Mar 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric layer comprises lanthanum, aluminum and oxygen and is formed between two conductors or a conductor and substrate. In one embodiment, the dielectric layer is graded with respect to the lanthanum or aluminum. In another embodiment, an insulating layer is formed between the conductor or substrate and the dielectric layer. The dielectric layer can be formed by atomic layer chemical vapor deposition, physical vapor deposition, organometallic chemical vapor deposition or pulsed laser deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.