Method for making an active pixel sensor
US6541329B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Sep 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A plurality of active pixel sensors are formed on the surface of a semiconductor wafer. The semiconductor wafer comprises a P-type substrate, an active pixel sensor region and a periphery circuit region. A first active pixel sensor block mask (APSB mask) is formed to cover the active pixel sensor region, then at least one N-well on the surface of the semiconductor wafer not covered by the first APSB mask is formed. A second APSB mask and at least one N-well mask are formed to cover the active pixel sensor region and the region outside the P-well region. At least one P-well on the surface of the semiconductor wafer not covered by the second APSB mask and the N-well mask is formed. Finally, at least one photodiode and at least one complementary metal-oxide semiconductor (CMOS) transistor are formed on the surface of the active pixel sensor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.