Method for manufacturing a conductor structure for an integrated circuit

US6541372B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stephan Wege · Osterburken, DE
• Peter Moll · Dresden, DE

Key dates

• Filing date: Mar 7, 2001
• Grant date: Apr 1, 2003
• Expiry date: May 18, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32139
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A simple to manufacture conductor structure is described which requires only a small number of process steps. The conductor structure contains a structured, first insulating layer to which a first passivation layer is applied. A layer of conductive material is applied thereto and in turn a second passivation layer is applied to the layer of conductive material. A hard mask is applied to the second passivation layer. The layer of conductive material is removed in regions defined by the hard mask. The first passivation layer is removed in the regions defined by the hard mask by sputtering and is at least partially deposited again on the side wall of the layer of conductive material.