Method for plasma etching of Ir-Ta-O electrode and for post-etch cleaning
US6541385B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
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Key dates
| Filing date | May 14, 2001 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Jun 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of forming an electrode in an integrated circuit includes preparing a silicon-base substrate, including forming semiconductor structures on the substrate to form an integrated substrate structure; depositing a layer of electrode material on a substrate structure; patterning the layer of electrode material to form electrode elements, wherein said patterning includes plasma etching the layer of electrode material in a plasma reactor in an etching gas atmosphere having a fluorine component therein; and cleaning the substrate structure and electrode elements in a distilled water bath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.