Cleaning solution for semiconductor surfaces following chemical-mechanical polishing
US6541434B2 · kind B2 · utility
14Cited by
17References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 23, 2002 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | May 23, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.