Optoelectronic device including a barrier layer and interface barrier layer and a method of manufacture thereof
US6542686B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2000 |
| Grant date | Apr 1, 2003 |
| Priority date | — |
| Expiry date | Aug 25, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/131
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides an optoelectronic device and a method of manufacture therefor, that prevents dopant diffusion and controls the dopant concentration therein. The optoelectronic device includes an active region formed over a substrate, and an interface barrier layer and barrier layer located over the active region. The optoelectronic device further includes an upper cladding layer located over the interface barrier layer and the barrier layer. In an exemplary embodiment of the invention, the interface barrier layer is an indium phosphide interface barrier layer and the barrier layer is an indium gallium arsenide phosphide barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.