Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries
US6544345B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Dec 31, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.