Electrodeposition chemistry for filling apertures with reflective metal
US6544399B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1999 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Jun 17, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D7/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers (“carrier”) and organic divalent sulfur compounds (“accelerator”), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at con…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.