Methods for reducing the curvature in boron-doped silicon micromachined structures
US6544655B1 · kind B1 · utility
9Cited by
4References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 8, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Jan 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2495
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Layers of boron-doped silicon having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near the top and bottom surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers are substantially balanced, thereby resulting in layers with reduced out-of-plane curvature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.