Method for treating silicon-containing polymer layers with plasma or electromagnetic radiation
US6544858B1 · kind B1 · utility
81Cited by
4References
37Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 18, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Aug 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon-containing polymer is deposited in a recess on the surface of the substrate. The substrate is then heated to a given temperature. The surface of the substrate, heated to the given temperature and having the silicon-containing polymer deposited thereon, is subjected to gas or vapor activated by a plasma or other electromagnetic radiation which is distinct from a source of heat used to heat the substrate to the given temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.