Chemical vapor deposition of silicate high dielectric constant materials
US6544875B1 · kind B1 · utility
70Cited by
28References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 7, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Jan 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a conductive structure over the semiconductor substrate (step 106 of FIG. 1); and forming a layer of high-dielectric constant material between the conductive structure and the semiconductor substrate (step 102 of FIG. 1), the layer of high-dielectric constant material is formed by supplying a gaseous silicon source and a second gaseous material which is comprised of a material selected from the group consisting of: Hf, Zr, La, Y, Sc, Ce and any combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.