Process for isolating an exposed conducting surface
US6544886B2 · kind B2 · utility
4Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | May 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02178
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of isolating an exposed conductive surface. An aluminum layer (130) is selectively formed over the exposed conductive (106) surface (e.g., Cu) but not over the surrounding dielectric (110) surface using a thermal CVD process. The aluminum layer (130) is then oxidized to form a thin isolating aluminum-oxide (108) over only the conductive surface. The isolating aluminum-oxide provides a barrier for the Cu while taking up minimal space and reducing the effective dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.