Polycide etch process
US6544887B1 · kind B1 · utility
4Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Mar 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching contact openings into a polycide layer including a metal silicide layer and a polysilicon layer comprises providing a substrate that includes a polycide layer, forming a patterned photoresist mask, and etching with a series of plasmas. The etches include a silicide etch, a polycide etch including chlorine gas and nitrogen gas where the nitrogen flow rate is between 20% and about 30% of the sum of the nitrogen flow rate plus the chlorine flow rate, and a poly overetch. A polycide etch with a composition in the specified range will have a polycide selectivity greater than one.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.