Plasma thin-film deposition method
US6544901B1 · kind B1 · utility
3Cited by
6References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 26, 2000 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | May 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
As thin-film deposition gases, cyclic C5F8 gas and a hydrocarbon gas, e.g., C2H4 gas, are used. These gases are activated as plasma under a pressure of, e.g., 0.1 Torr, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof. Alternatively, cyclic C6F6 gas is used as a thin-film deposition gas, and activated as plasma under a pressure of, e.g., 0.06 Pa, to deposit a CF film on a semiconductor wafer at a process temperature of 400° C. using active species thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.