Photo-sensor cross-section for increased quantum efficiency
US6545258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Apr 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/221
Abstract
Photo-sensors, such as photo-diodes, are formed using regions with cross-sections that increase the overall quantum efficiency of the resulting photo-sensor. The cross-sections have additional (e.g., interior) side-wall interfaces, and, in some embodiments, an additional, relatively shallow bottom interface. The increased total side-wall area and any additional shallow bottom area increase the total photo-junction volume located near the surface of the device. As a result, a greater fraction of photons having relatively small absorption lengths (e.g., blue light) will be absorbed within a photo-junction, thereby increasing the quantum efficiency for those photons. The present invention enables photo-sensors to be implemented with more uniform spectral response.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.