Using selective deposition to form phase-change memory cells
US6545287B2 · kind B2 · utility
200Cited by
2References
15Claims
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Key dates
| Filing date | Sep 7, 2001 |
| Grant date | Apr 8, 2003 |
| Priority date | — |
| Expiry date | Sep 7, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
Abstract
A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surrounding the pore. Through the use of selective deposition techniques, the adhesion-promoting material can be positioned where needed and the lower electrode may be defined in a fashion that may reduce shunting current, reduce device current requirements, and increase dynamic range in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.