Chien Chiang
31Patents
19h-index
31Co-inventors
81Inventor score
Filing activity: Jun 26, 1996 → Oct 23, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6339544B1 | Method to enhance performance of thermal resistor device | Electricity | 429 | Expired |
| US6621095B2 | Method to enhance performance of thermal resistor device | Electricity | 389 | Expired |
| US5739579A | Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections | Emerging Cross-Sectional Technologies | 296 | Expired |
| US6797979B2 | Metal structure for a phase-change memory device | Emerging Cross-Sectional Technologies | 215 | Expired |
| US6861267B2 | Reducing shunts in memories with phase-change material | Electricity | 207 | Expired |
| US6545287B2 | Using selective deposition to form phase-change memory cells | Emerging Cross-Sectional Technologies | 200 | Expired |
| US6569705B2 | Metal structure for a phase-change memory device | Emerging Cross-Sectional Technologies | 189 | Expired |
| US5817572A | Method for forming multileves interconnections for semiconductor fabrication | Emerging Cross-Sectional Technologies | 152 | Expired |
| US6309956A | Fabricating low K dielectric interconnect systems by using dummy structures to enhance process | Emerging Cross-Sectional Technologies | 88 | Expired |
| US6143647A | Silicon-rich block copolymers to achieve unbalanced vias | Emerging Cross-Sectional Technologies | 67 | Expired |
| US5886410A | Interconnect structure with hard mask and low dielectric constant materials | Electricity | 66 | Expired |
| US5935868A | Interconnect structure and method to achieve unlanded vias for low dielectric constant materials | Electricity | 54 | Expired |
| US6848177B2 | Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme | Emerging Cross-Sectional Technologies | 50 | Expired |
| US6051869A | Silicon-rich block copolymers to achieve unbalanced vias | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6303464A | Method and structure for reducing interconnect system capacitance through enclosed voids in a dielectric layer | Electricity | 45 | Expired |
| US6027995A | Method for fabricating an interconnect structure with hard mask and low dielectric constant materials | Electricity | 39 | Expired |
| US6037249A | Method for forming air gaps for advanced interconnect systems | Electricity | 29 | Expired |
| US6040628A | Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectrics | Electricity | 24 | Expired |
| US6277765A | Low-K Dielectric layer and method of making same | Electricity | 23 | Expired |
| US5880030A | Unlanded via structure and method for making same | Emerging Cross-Sectional Technologies | 18 | Expired |
| US7183567B2 | Using selective deposition to form phase-change memory cells | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6239019A | Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectrics | Electricity | 12 | Expired |
| US7214632B2 | Using selective deposition to form phase-change memory cells | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6777320B1 | In-plane on-chip decoupling capacitors and method for making same | Electricity | 9 | Expired |
| US7217945B2 | Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby | Physics | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.